IRGC5B120UB pd - 94315 IRGC5B120UB igbt die in wafer form 10/02/01 norminal backmetal composition, thickness: al-ti-niv-ag ( 1ka-1ka-4ka-6ka ) norminal front metal composition, thickness: 99% al, 1% si (4 microns) dimensions: 0.112" x 0.150" wafer diameter: 150mm, with std. < 100 > flat wafer thickness: 185 +/- 15 microns relevant die mechanical dwg. number 01-5428 minimum street width 100 microns reject ink dot size 0.25mm diameter minimum ink dot location consistent throughout same wafer lot recommended storage environment: store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300c mechanical data die outline parameter description guaranteed (min/max) test conditions v ce (on) collector-to-emitter saturation voltage 2.54v min., 3.64v max. i c = 2.5a, t j = 25c, v ge = 15v v (br)ces collector-to-emitter breakdown voltage 1200v min. t j = 25c, i ces = 100a, v ge = 0v v ge(th) gate threshold voltage 4.4v min., 6.0v max. v ge = v ce , t j =25c, i c =125a i ces zero gate voltage collector current 5.0 a max. t j = 25c, v ce = 1200v i ges gate-to-emitter leakage current 1.1 a max. t j = 25c, v ge = +/- 20v electrical characteristics ( wafer form ) e c g 1. all dimens ions are s hown in millimet ers [inches ]. 4. dime ns ional t ol e rance s : 3. let ter designat ion: 2. controlling dimens ion: [inch]. not e s : widt h < [.050] t ole rance = + /- [.004] > [.050] t ole rance = + /- [.008] > 1.270 tolerance = +/- 0.203 & length > [.0250] tolerance = +/- [.0010] > 0.635 tolerance = +/- 0.025 < [.0250] tolerance = +/- [.0005] < 0.635 tolerance = +/- 0.013 < 1.270 tolerance = +/- 0.102 & length overall die: widt h bonding pads: sk = source kelvin is = curre nt s e ns e g = gat e s = source e = emitter 0.646 [.025] emitter g 3.810 [.150] 1.454 [.057] 0.617 [.024] 2.845 [.112] 2.325 [.091] 1200 v i c(nom) = 5a vce(on) typ. = 4.01v @ i c(nom) @ 25 c ultrafast igbt short circuit rated 150mm wafer features gen5 non punch through (npt) technology ultrafast 10s short circuit capability square rbsoa positive v ce(on) temperature coefficient benefits benchmark efficiency above 20khz optimized for welding, ups, and induction heating rugged with ultrafast performance excellent current sharing in parallel operation qualified for industrial market
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